Characterization and Noise Limitations of Graphene Field-Effect Transistors
Faculty Sponsor(s)
Joelle Murray and Michael Crosser
Subject Area
Physics/Applied Physics
Description
Graphene-based field effect transistors (GFETs) are an innovative form of technology that can be applied in biosensors, such as biomedical devices. However, these devices produce unwanted signals, also known as noise, that cause inaccurate measurements. This noise is produced by the thermal excitation of charge carriers in the device, as well as the carriers being trapped in defective areas on the SiO2 chip the graphene sits on. Naturally, noise affects the mobility of the GFET, which is the speed in which charge carriers are carried through the material when exposed to an electric field. The resulting low-frequency 1/f noise density is paired with a white noise floor caused by high-frequency aliasing. The stacking of hexagonal boron nitride (hBN) on top and below the graphene device can be a possible solution to the produced noise, since the dielectric characteristics of hBN could act as an insulator that restricts the flow of charges interfering with the performance of the GFET. Through methods of GFET characterization and comparisons of electrical properties from testing, one can understand the mobility of the device. Further testing could quantify the spectral current noise density to compare the configurations of the graphene and hBN.
Recommended Citation
Johnson, Donovan Wade, "Characterization and Noise Limitations of Graphene Field-Effect Transistors" (2026). Linfield University Student Symposium: A Celebration of Scholarship and Creative Achievement. Event. Submission 15.
https://digitalcommons.linfield.edu/symposium/2026/all/15
Characterization and Noise Limitations of Graphene Field-Effect Transistors
Graphene-based field effect transistors (GFETs) are an innovative form of technology that can be applied in biosensors, such as biomedical devices. However, these devices produce unwanted signals, also known as noise, that cause inaccurate measurements. This noise is produced by the thermal excitation of charge carriers in the device, as well as the carriers being trapped in defective areas on the SiO2 chip the graphene sits on. Naturally, noise affects the mobility of the GFET, which is the speed in which charge carriers are carried through the material when exposed to an electric field. The resulting low-frequency 1/f noise density is paired with a white noise floor caused by high-frequency aliasing. The stacking of hexagonal boron nitride (hBN) on top and below the graphene device can be a possible solution to the produced noise, since the dielectric characteristics of hBN could act as an insulator that restricts the flow of charges interfering with the performance of the GFET. Through methods of GFET characterization and comparisons of electrical properties from testing, one can understand the mobility of the device. Further testing could quantify the spectral current noise density to compare the configurations of the graphene and hBN.