Event Title
Optimization of Pt-based Spin-Hall-Effect Spintronic Devices
Faculty Sponsor
Sergei Urazhdin
Location
Jereld R. Nicholson Library
Date
5-17-2013 3:00 PM
End Date
5-17-2013 4:30 PM
Subject Area
Physics
Description
The application of spintronics (spin-electronics) requires highly optimized devices. We aim to understand spin transport and its dependence on film thickness, so that the geometry of the device can be improved. This experiment investigates how the thickness of the sample affects the propagation of spin current (SC). Additionally we aim to reduce the effects from spin accumulation and reflection by the addition of a FeMn “spin sink” layer. Two series of sample multilayers are sputtered onto sapphire substrate, the first consists of Pt (x nm), and Permalloy (Py) (5 nm), where x is the variable thickness; the second series adds FeMn (0.5 nm) beneath Pt. SC is then induced by the Spin Hall Effect (SHE) where the effect on Py is measured by Brillouin Light Scattering (BLS) spectroscopy. Our data show the effects of SC increase inversely proportional to sample thickness and the addition of a spin sink layer improves these effects to a certain point where unexpected behavior occurs at x < 3nm.
Recommended Citation
Melander, Joshua R.; Ulrichs, Henning; Demidov, Vladislav E.; Demokritov, Sergej O.; Lim, Weng Lee; Ebrahim-Zadeh, Neema; and Urazhdin, Sergei, "Optimization of Pt-based Spin-Hall-Effect Spintronic Devices" (2013). Science and Social Sciences. Event. Submission 23.
https://digitalcommons.linfield.edu/studsymp_sci/2013/all/23
Optimization of Pt-based Spin-Hall-Effect Spintronic Devices
Jereld R. Nicholson Library
The application of spintronics (spin-electronics) requires highly optimized devices. We aim to understand spin transport and its dependence on film thickness, so that the geometry of the device can be improved. This experiment investigates how the thickness of the sample affects the propagation of spin current (SC). Additionally we aim to reduce the effects from spin accumulation and reflection by the addition of a FeMn “spin sink” layer. Two series of sample multilayers are sputtered onto sapphire substrate, the first consists of Pt (x nm), and Permalloy (Py) (5 nm), where x is the variable thickness; the second series adds FeMn (0.5 nm) beneath Pt. SC is then induced by the Spin Hall Effect (SHE) where the effect on Py is measured by Brillouin Light Scattering (BLS) spectroscopy. Our data show the effects of SC increase inversely proportional to sample thickness and the addition of a spin sink layer improves these effects to a certain point where unexpected behavior occurs at x < 3nm.