Electrostatic Doping of Graphene for Tunable Diodes
Faculty Sponsor(s)
Joelle Murray
Subject Area
Physics/Applied Physics
Description
In this work, devices were fabricated to explore the limits of electrostatically doped graphene diodes utilizing hexagonal boron nitride as an insulating layer. Initial tests confirmed the graphene’s responsiveness to gate voltages and demonstrated the viability of electrostatic doping through a thin insulating layer. Degradation of the graphene during testing resulted in a lack of measurable shifts in the completed devices.
Recommended Citation
Bales, Andrew, "Electrostatic Doping of Graphene for Tunable Diodes" (2026). Linfield University Student Symposium: A Celebration of Scholarship and Creative Achievement. Event. Submission 3.
https://digitalcommons.linfield.edu/symposium/2026/all/3
Electrostatic Doping of Graphene for Tunable Diodes
In this work, devices were fabricated to explore the limits of electrostatically doped graphene diodes utilizing hexagonal boron nitride as an insulating layer. Initial tests confirmed the graphene’s responsiveness to gate voltages and demonstrated the viability of electrostatic doping through a thin insulating layer. Degradation of the graphene during testing resulted in a lack of measurable shifts in the completed devices.