Characterization of Electronic Behavior within a 2D FET using KPFM
Faculty Sponsor(s)
Jennifer Heath
Location
Jereld R. Nicholson Library: Grand Avenue
Subject Area
Physics/Applied Physics
Description
Developing a further understanding of the electronic behavior within 2D devices is a crucial step before implementing their wider use in technology. A 2D Field Effect Transistor (FET) utilizes biasing a graphene back gate to shift the chemical potential of the WSe2 semiconductor above it. In this experiment Kelvin Probe Force Microscopy (KPFM), an indirect work function measurement technique, has been used to generate potential spatial maps of the 2D FET at differing back gate biases. KPFM results are reaffirmed by expected electronic behavior in areas of the h-BN insulative component and the graphene conductive contact component. The measured electrostatic potential of WSe2 coincides with the electronic behavior of ambipolar semiconductors. The relative chemical potential of the WSe2 sample was extracted and an estimated bandgap of 1.26 ±.063 eV was derived, falling outside of reported results.
Recommended Citation
Murphy, Joseph, "Characterization of Electronic Behavior within a 2D FET using KPFM" (2022). Linfield University Student Symposium: A Celebration of Scholarship and Creative Achievement. Event. Submission 30.
https://digitalcommons.linfield.edu/symposium/2022/all/30
Characterization of Electronic Behavior within a 2D FET using KPFM
Jereld R. Nicholson Library: Grand Avenue
Developing a further understanding of the electronic behavior within 2D devices is a crucial step before implementing their wider use in technology. A 2D Field Effect Transistor (FET) utilizes biasing a graphene back gate to shift the chemical potential of the WSe2 semiconductor above it. In this experiment Kelvin Probe Force Microscopy (KPFM), an indirect work function measurement technique, has been used to generate potential spatial maps of the 2D FET at differing back gate biases. KPFM results are reaffirmed by expected electronic behavior in areas of the h-BN insulative component and the graphene conductive contact component. The measured electrostatic potential of WSe2 coincides with the electronic behavior of ambipolar semiconductors. The relative chemical potential of the WSe2 sample was extracted and an estimated bandgap of 1.26 ±.063 eV was derived, falling outside of reported results.
