Submission Title

Characterization of Electronic Behavior within a 2D FET using KPFM

Location

Jereld R. Nicholson Library: Grand Avenue

Subject Area

Physics/Applied Physics

Description

Developing a further understanding of the electronic behavior within 2D devices is a crucial step before implementing their wider use in technology. A 2D Field Effect Transistor (FET) utilizes biasing a graphene back gate to shift the chemical potential of the WSe2 semiconductor above it. In this experiment Kelvin Probe Force Microscopy (KPFM), an indirect work function measurement technique, has been used to generate potential spatial maps of the 2D FET at differing back gate biases. KPFM results are reaffirmed by expected electronic behavior in areas of the h-BN insulative component and the graphene conductive contact component. The measured electrostatic potential of WSe2 coincides with the electronic behavior of ambipolar semiconductors. The relative chemical potential of the WSe2 sample was extracted and an estimated bandgap of 1.26 ±.063 eV was derived, falling outside of reported results.

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May 20th, 9:00 AM May 20th, 3:00 PM

Characterization of Electronic Behavior within a 2D FET using KPFM

Jereld R. Nicholson Library: Grand Avenue

Developing a further understanding of the electronic behavior within 2D devices is a crucial step before implementing their wider use in technology. A 2D Field Effect Transistor (FET) utilizes biasing a graphene back gate to shift the chemical potential of the WSe2 semiconductor above it. In this experiment Kelvin Probe Force Microscopy (KPFM), an indirect work function measurement technique, has been used to generate potential spatial maps of the 2D FET at differing back gate biases. KPFM results are reaffirmed by expected electronic behavior in areas of the h-BN insulative component and the graphene conductive contact component. The measured electrostatic potential of WSe2 coincides with the electronic behavior of ambipolar semiconductors. The relative chemical potential of the WSe2 sample was extracted and an estimated bandgap of 1.26 ±.063 eV was derived, falling outside of reported results.