Thesis (Open Access)
Bachelor of Science in Physics
Michael Crosser (Thesis Advisor)
Jennifer Heath & Brian Gilbert (Committee Members)
Graphene can be used as the active film in a gas sensor. To provide the best possible electrical properties, it is important that graphene films be single-layered and single-crystalline. A low vacuum chemical vapor deposition (CVD) chamber was constructed to grow graphene with these properties. The effect of growth parameters, such as annealing times and methane partial pressure, on the quality of graphene was investigated. Raman spectra of graphene were used to quantify the characteristics of the synthesized graphene. Graphene synthesized through CVD has two major peaks, the G (~1570cm-1) and the 2D peak (~2700 cm-1). Information about the peaks was extracted through the use of a Lorentzian curve fit. The ratio of the 2D:G peaks and the 2D width parameters seem to demonstrate no distinct correlation between graphene quality and the partial pressure of methane. It does suggest, however, an apparent improvement in graphene quality with increased annealing time. Scanning electron microscope (SEM) images were also taken of a sample that was purposely synthesized to provide partial graphene coverage.
Tan, Andrew, "Optimization of Chemical Vapor Deposition Grown Graphene" (2014). Senior Theses. 8.