DigitalCommons@Linfield

Doping Density Measurements of Textured Solar Cells Using Capacitance-Based Techniques

Jereld R. Nicholson Library

Doping densities of the p-doped sides of Si solar cell devices were measured using capacitance techniques. The values were compared for textured and untextured samples to determine if the increased surface area created by surface texturing significantly affects the measurement outcome. Geometric approaches to measuring the true surface area of the textured samples were explored. Experimental results were compared to those obtained from Time of flight secondary ion mass spectroscopy measurements.