Event Title
Capacitance Measurements on Schottky Contacts
Faculty Sponsor
Jennifer Heath
Location
Jereld R. Nicholson Library
Date
5-13-2011 3:00 PM
End Date
5-13-2011 4:30 PM
Subject Area
Physics (general)
Description
This thesis investigates the effect oxygen has on metal-semiconductor contacts, specifically gold on an n-type Silicon wafer. The capacitances of the devices were measured as a function voltage and a simple parallel R-C circuit was used to model behavior. Properties of a Schottky contact were used to attempt to classify the sample and qualify the R-C model. Although the device did exhibit characteristics of a Schottky junction, it was shown that an R-C model could not be used to simulate the behavior of the device. Also considered was a model of two diodes in series, which was shown to exhibit similar curve shape.
Recommended Citation
O'Brien, Katie, "Capacitance Measurements on Schottky Contacts" (2011). Science and Social Sciences. Event. Submission 23.
https://digitalcommons.linfield.edu/studsymp_sci/2011/all/23
Capacitance Measurements on Schottky Contacts
Jereld R. Nicholson Library
This thesis investigates the effect oxygen has on metal-semiconductor contacts, specifically gold on an n-type Silicon wafer. The capacitances of the devices were measured as a function voltage and a simple parallel R-C circuit was used to model behavior. Properties of a Schottky contact were used to attempt to classify the sample and qualify the R-C model. Although the device did exhibit characteristics of a Schottky junction, it was shown that an R-C model could not be used to simulate the behavior of the device. Also considered was a model of two diodes in series, which was shown to exhibit similar curve shape.