We report on a scanning capacitance spectroscopy (SCS) study on the n+-p junction of multicrystalline silicon solar cells. We found that the spectra taken at space intervals of ∼10 nm exhibit characteristic features that depend strongly on the location relative to the junction. The capacitance-voltage spectra exhibit a local minimum capacitance value at the electrical junction, which allows the junction to be identified with ∼10-nm resolution. The spectra also show complicated transitions from the junction to the n-region with two local capacitance minima on the capacitance-voltage curves; similar spectra to that have not been previously reported in the literature. These distinctive spectra are due to uneven carrier-flow from both the n- and p-sides. Our results contribute significantly to the SCS study on asymmetrical junctions.
Copyright © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics, 2011, volume 110, issue 1 and may be found at doi:10.1063/1.3605507.
Chung-Sheng Jiang, Jennifer T. Heath, Helio R. Moutinho, & Mowafak M. Al-Jassim
Scanning capacitance spectroscopy on n+-p asymmetrical junctions in multicrystalline Si solar cells.
Journal of Applied Physics, 2011, volume 110, issue 1
Jiang, Chun-Sheng; Heath, Jennifer T.; Moutinho, Helio R.; and Al-Jassim, Mowafak M., "Scanning Capacitance Spectroscopy on n+-p Asymmetrical Junctions in Multicrystalline Si Solar Cells" (2011). Faculty Publications. Published Version. Submission 2.