Electromagnetics and Photonics | Materials Science and Engineering | Physics
Defects in the band gap of CuIn1-xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.
© 2002 American Institute of Physics
Jennifer T. Heath, J. David Cohen, William N. Shafarman, Dongxiang Liao, & Angus Rockett
Effect of Ga Content on Defect States in CuIn1-xGaxSe2 Photovoltaic Devices.
Applied Physics Letters, 2002, volume 80, issue 24, pages 4540-4542
Heath, Jennifer T.; Cohen, J. David; Shafarman, William N.; Liao, Dongxiang; and Rockett, Angus, "Effect of Ga Content on Defect States in CuIn1-xGaxSe2 Photovoltaic Devices" (2002). Faculty Publications. Published Version. Submission 1.